The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety . CNU = 8-lead, 6 x 8 mm CASON. T = lead. AT45DBD-CNU datasheet, AT45DBD-CNU circuit, AT45DBD-CNU data sheet: ATMEL – megabit volt Dual-interface DataFlash,alldatasheet, . AT45DBD-CNU – Flash Memory, Serial NOR, 64 Mbit, Pages x. Add to compare. Image is for Technical Datasheet: AT45DBD-CNU Datasheet.

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To enable the sector protection using the Please contact Atmel datassheet the estimated availability of devices with the fix. Use Block Erase opcode 50H alternative.

Stock/Availability for: AT45DB642DCNU

Manufacturer ID codes that are two, three or even four bytes long with the first byte s in the sequence being 7FH. The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed. Deep Power-down, the device will return to the normal standby mode. Master clocks in BYTE a. All program operations to the DataFlash occur on a page by page basis The algorithm will be repeated sequentially for each page within the entire array.

AT45DBD-CNU Atmel, AT45DBD-CNU Datasheet

Page 37 Output Test Load To allow for simple in-system reprogrammability, the AT45DBD does not require high input voltages for datashewt. Unless otherwise specified tolerance: The shipping carrier option is not marked on the devices.

Command Resume from Deep Power-down Figure This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page at45db642d-dnu can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation.


To perform datasbeet contin- uous read with the page size set to bytes, the opcode, 03H, must be clocked into the device followed by three address bytes A22 – A The Block Erase function is not affected by the Chip Erase issue. Elcodis is a trademark of Elcodis Company Ltd.


The Sector Protection Register can be reprogrammed while the sector protection enabled or dis- abled. Page 31 Table Being able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely.

Datashet not possible to only program the first two bytes of the register and then pro- gram the remaining 62 bytes at a later time. Parts ordered with suffix SL are shipped in bulk with the page size set to bytes. VCSL Datasheett t from max. Main Memory Page Read Opcode: Sector Lockdown com- mand if necessary.

Software Sector Protection 8. For the AT45DBD, the four bits are The decimal value of these four binary bits datasgeet not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices The status of whether or not sector protection has been datashert or disabled by either the software or the hardware controlled methods can be deter- mined by checking the At45dv642d-cnu Register.

The algorithm above shows the programming of a single page. Page 39 Utilizing the RapidS To take advantage of the RapidS function’s ability to dstasheet at higher clock datasheeg, a full clock cycle must be used to transmit data back and forth across the serial bus.

The device operates from a single power supply, 2. The entire main memory can be erased at one time by using the Chip Erase command. Standard parts are shipped with the page size set to bytes. For Atmel and some other manufacturersthe Manufacturer ID data is comprised of only one byte. Output Test Load Command Sector Lockdown Figure Configuration Register is a user-programmable nonvolatile regis- ter that allows the page size of the main memory to be configured for binary page size bytes or standard DataFlash page size bytes.


The DataFlash is designed to Main Memory Page to Buffer 1 or 2 Transfer 6. Low-power applications may choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector.

No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. The surface finish of the package shall be EDM Charmille Page 35 Table Master clocks in BYTE h last output byte.

Reading the Sector Lockdown Register The Sector Lockdown Register can be read to determine which sectors in the memory array are permanently locked down. The device density is indicated using bits and 2 of the status register. Main Memory Page Program through Buffer 1 or 2 PUW Changed t from max The user is able datasueet configure these parts to a byte page size if desired.

Page 21 Figure Other algorithms can be used to rewrite portions of the Flash array. Therefore, the contents of the buffer will be altered from its previous state when this command is issued. Read Operations The following block diagram and waveforms illustrate the various read sequences available.